Scaling properties of ballistic nano-transistors
نویسندگان
چکیده
منابع مشابه
Scaling properties of ballistic nano-transistors
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more d...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2011
ISSN: 1556-276X
DOI: 10.1186/1556-276x-6-365